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arXiv · 0904.3628

Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

Hu Young Jeong·Jeong Yong Lee·Sung-Yool Choi·Jeong Won Kim
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Abstract

We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical TEM technique using energy-filtering transmission electron microscopy and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at top interface by an oxidation-reduction reaction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films.

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Hu Young Jeong, Jeong Yong Lee, Sung-Yool Choi, Jeong Won Kim. 2009-04-23. Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films. https://doi.org/10.1063/1.3251784

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