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arXiv · 0904.1278

Pressure-induced Superconductivity in Crystalline Boron Nanowires

Liling Sun·Takahiro Matsuoka·Yasuyuki Tamari·Katsuya Shimizu·Jifa Tian·Yuan Tian·Chendong Zhang·Chengmin Shen·Wei Yi·Hongjun Gao·Jianqi Li·Xiaoli Dong·Zhongxian Zhao
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Abstract

We report high-pressure induced superconductivity in boron nanowires (BNWs) with rhombohedral crystal structure. Obviously different from bulk rhombohedral boron, these BNWs show a semiconductor-metal transition at much lower pressure than bulk boron. Also, we found these BNWs become superconductors with Tc=1.5 K at 84 GPa, at the pressure of which bulk boron is still a semiconductor, via in-situ resistance measurements in a diamond anvil cell. With increasing pressure, Tc of the BNWs increases. The occurrence of superconductivity in the BNWs at a pressure as low as 84 GPa probably arises from the size effect.

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Liling Sun, Takahiro Matsuoka, Yasuyuki Tamari, Katsuya Shimizu, Jifa Tian, Yuan Tian, Chendong Zhang, Chengmin Shen, Wei Yi, Hongjun Gao, Jianqi Li, Xiaoli Dong, Zhongxian Zhao. 2009-04-08. Pressure-induced Superconductivity in Crystalline Boron Nanowires. https://doi.org/10.1103/physrevb.79.140505

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