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A new, enhanced diamond single photon emitter in the near infra-red

Igor Aharonovich·Chunyuan Zhou·Alastair Stacey·Julius Orwa·David Simpson·Andrew D. Greentree·Francois Treussart·Jean Francois Roch·Steven Prawer
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Abstract

Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of a new color center which has photophysical properties surpassing those of the two main-stay centers, namely the nitrogen vacancy and NE8 centers. The new center is fabricated using focused ion beam implantation of nickel into isolated chemical vapor deposited diamond micro-crystals. Room temperature photoluminescence studies reveal a narrow emission in the near infrared region centered at 768 nm with a lifetime as short as 2 ns. Its focused ion beam compatibility opens the prospect to fabrication with nanometer resolution and realization of integrated quantum photonic devices. Preliminary investigations suggest that this center arises from an as-yet uncharacterized nickel-silicon complex.

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Igor Aharonovich, Chunyuan Zhou, Alastair Stacey, Julius Orwa, David Simpson, Andrew D. Greentree, Francois Treussart, Jean Francois Roch, Steven Prawer. 2009-02-18. A new, enhanced diamond single photon emitter in the near infra-red. https://arxiv.org/abs/0902.3051

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