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arXiv · 0901.2651

Target bias voltage effect on properties of magnetic tunnel junctions by biased target ion beam deposition

Wei Chen·Dao N. H. Nam·Jiwei Lu·Kevin G. West·Stuart A. Wolf
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Abstract

Magnetic tunnel junctions (MTJ) with AlOx barrier were fabricated by a deposition tool called Biased Target Ion Beam Deposition (BTIBD) using low energy ion source (0-50 eV) and voltage biased targets. The BTIBD system applies bias voltage directly and only on the desired targets, providing enough sputtering energy and avoiding "overspill" contamination during film deposition. The successful deposition of AlOx-MTJs demonstrated the capability of BTIBD to make multilayer structures with good film quality. MTJ thin film surface roughness and intermixing between layers are among the key problems leading to low TMR performance. Here by studying the bias voltage effect on MTJ properties via the measurement of Neel coupling field and TMR, we suggest that the lower bias voltage reduces the intermixing that occurs when top CoFe free layer is deposited on AlOx barrier, but produces relatively high surface roughness. On the other hand, higher energy deposition enhances both interlayer mixing and surface flattening. Such understanding of bias voltage effects on film properties could be used to optimize the MTJ performances.

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Wei Chen, Dao N. H. Nam, Jiwei Lu, Kevin G. West, Stuart A. Wolf. 2009-01-17. Target bias voltage effect on properties of magnetic tunnel junctions by biased target ion beam deposition. https://arxiv.org/abs/0901.2651

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