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arXiv · 0811.4639

Spin susceptibility and effective mass of two-dimensional electrons in MgxZn1-xO/ZnO heterostructures

A. Tsukazaki·A. Ohtomo·M. Kawasaki·S. Akasaka·H. Yuji·K. Tamura·K. Nakahara·T. Tanabe·A. Kamisawa·T. Gokmen·J. Shabani·M. Shayegan
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Abstract

We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x = 0.05, 0.08, and 0.11), grown by molecular-beam epitaxy on (0001) ZnO substrates. By tuning the built-in polarization through control of the barrier composition, the electron density was systematically varied in the range of 5.6 x 10^11 to 1.6 x 10^12 cm^-2, corresponding to a range of 3.1 < rs < 5.2, where rs is the average electron spacing measured in units of the effective Bohr radius. We used the coincidence technique, where crossings of the spin-split Landau levels occur at critical tilt angles of magnetic field, to evaluate the spin susceptibility. In addition, we determined the effective mass from the temperature dependence of the Shubnikov-de Haas oscillations measured at the coincidence conditions. The susceptibility and the effective mass both gradually increase with decreasing electron density, reflecting the role of electron-electron interaction.

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A. Tsukazaki, A. Ohtomo, M. Kawasaki, S. Akasaka, H. Yuji, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa, T. Gokmen, J. Shabani, M. Shayegan. 2008-12-02. Spin susceptibility and effective mass of two-dimensional electrons in MgxZn1-xO/ZnO heterostructures. https://doi.org/10.1103/physrevb.78.233308

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