Interface and electronic characterization of thin epitaxial Co3O4 films

C. A. F. Vaz; H. -Q. Wang; C. H. Ahn; V. E. Henrich; M. Z. Baykara; T. C. Schwendemann; N. Pilet; B. J. Albers; U. D. Schwarz; L. H. Zhang; Y. Zhu; J. Wang; E. I. Altman

doi:10.1016/j.susc.2008.11.022

arXiv · 0811.3797

Interface and electronic characterization of thin epitaxial Co3O4 films

C. A. F. Vaz·H. -Q. Wang·C. H. Ahn·V. E. Henrich·M. Z. Baykara·T. C. Schwendemann·N. Pilet·B. J. Albers·U. D. Schwarz·L. H. Zhang·Y. Zhu·J. Wang·E. I. Altman

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Abstract

The interface and electronic structure of thin (~20-74 nm) Co3O4(110) epitaxial films grown by oxygen-assisted molecular beam epitaxy on MgAl2O4(110) single crystal substrates have been investigated by means of real and reciprocal space techniques. As-grown film surfaces are found to be relatively disordered and exhibit an oblique low energy electron diffraction (LEED) pattern associated with the O-rich CoO2 bulk termination of the (110) surface. Interface and bulk film structure are found to improve significantly with post-growth annealing at 820 K in air and display sharp rectangular LEED patterns, suggesting a surface stoichiometry of the alternative Co2O2 bulk termination of the (110) surface. Non-contact atomic force microscopy demonstrates the presence of wide terraces separated by atomic steps in the annealed films that are not present in the as-grown structures; the step height of ~ 2.7 A corresponds to two atomic layers and confirms a single termination for the annealed films, consistent with the LEED results. A model of the (1 * 1) surfaces that allows for compensation of the polar surfaces is presented.

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C. A. F. Vaz, H. -Q. Wang, C. H. Ahn, V. E. Henrich, M. Z. Baykara, T. C. Schwendemann, N. Pilet, B. J. Albers, U. D. Schwarz, L. H. Zhang, Y. Zhu, J. Wang, E. I. Altman. 2008-11-24. Interface and electronic characterization of thin epitaxial Co3O4 films. https://doi.org/10.1016/j.susc.2008.11.022

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