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arXiv · 0811.2960

Controlling the efficiency of spin injection into graphene by carrier drift

C. Józsa·M. Popinciuc·N. Tombros·H. T. Jonkman·B. J. van Wees
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Abstract

Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room temperature non-local spin valve measurements in cobalt/aluminum-oxide/graphene structures with an injection efficiency as high as 25%, where electrical contact is achieved through relatively transparent pinholes in the oxide. This value is further enhanced to 43% by applying a DC current bias on the injector electrodes, that causes carrier drift away from the contact. A reverse bias reduces the AC spin valve signal to zero or negative values. We introduce a model that quantitatively predicts the behavior of the spin accumulation in the graphene under such circumstances, showing a good agreement with our measurements.

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C. Józsa, M. Popinciuc, N. Tombros, H. T. Jonkman, B. J. van Wees. 2008-11-18. Controlling the efficiency of spin injection into graphene by carrier drift. https://doi.org/10.1103/physrevb.79.081402

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