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arXiv · 0811.1937

Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems

I. Knezevic·E. B. Ramayya·D. Vasileska·S. M. Goodnick
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Abstract

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.

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I. Knezevic, E. B. Ramayya, D. Vasileska, S. M. Goodnick. 2008-11-12. Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems. https://doi.org/10.1166/jctn.2009.1240

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