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arXiv · 0810.5048

Nitrogen defects and ferromagnetism of Cr-doped AlN diluted magnetic semiconductor from first principles

Li-Jie Shi·Li-Fang Zhu·Yong-Hong Zhao·Bang-Gui Liu
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Abstract

High Curie temperature of 900 K has been reported in Cr-doped AlN diluted magnetic semiconductors prepared by various methods, which is exciting for spintronic applications. It is believed that N defects play important roles in achieving the high temperature ferromagnetism in good samples. Motivated by these experimental advances, we use a full-potential density-functional-theory method and supercell approach to investigate N defects and their effects on ferromagnetism of (Al,Cr)N with N vacancies (V_N). Calculated results are in agreement with experimental observations and facts of real Cr-doped AlN samples and their synthesis. Our first-principles results are useful to elucidating the mechanism for the ferromagnetism and exploring high-performance Cr-doped AlN diluted magnetic semiconductors.

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Li-Jie Shi, Li-Fang Zhu, Yong-Hong Zhao, Bang-Gui Liu. 2008-10-28. Nitrogen defects and ferromagnetism of Cr-doped AlN diluted magnetic semiconductor from first principles. https://doi.org/10.1103/physrevb.78.195206

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