Zeno Quantum Gates in Semiconductor Quantum Dots

K. J. Xu; Y. P. Huang; M. G. Moore; C. Piermarocchi

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arXiv · 0810.4489

Zeno Quantum Gates in Semiconductor Quantum Dots

K. J. Xu·Y. P. Huang·M. G. Moore·C. Piermarocchi

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Abstract

We propose a scheme for a two-qubit conditional phase gate by quantum Zeno effect with semiconductor quantum dots. The system consists of two charged dots and one ancillary dot that can perform Rabi oscillations under a resonant laser pulse. The quantum Zeno effect is induced by phonon-assisted exciton relaxation between the ancillary dot and the charged dots, which is equivalent to a continuous measurement. We solve analytically the master equation and simulate the dynamics of the system using a realistic set of parameters. In contrast to standard schemes, larger phonon relaxation rates increase the fidelity of the operations.

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BibTeX RIS

K. J. Xu, Y. P. Huang, M. G. Moore, C. Piermarocchi. 2008-10-24. Zeno Quantum Gates in Semiconductor Quantum Dots. https://arxiv.org/abs/0810.4489

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