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arXiv · 0810.2692

The microscopic study of a single hydrogen-like impurity in semi-insulating GaAs

D. G. Eshchenko·V. G. Storchak·S. P. Cottrell·E. Morenzoni
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Abstract

The charge dynamics of hydrogen-like centers formed by the implantation of energetic (4 MeV) muons in semi-insulating GaAs have been studied by muon spin resonance in electric fields. The results point to the significant role of deep hole traps in the compensation mechanism of GaAs. Electric-field-enhanced neutralization of deep electron and hole traps by muon-track-induced hot carriers results to an increase of the non-equilibrium carrier life-times. As a consequence, the muonium ($μ^+ + e^-$) center at the tetrahedral As site can capture the track's holes and therefore behaves like a donor.

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D. G. Eshchenko, V. G. Storchak, S. P. Cottrell, E. Morenzoni. 2008-10-15. The microscopic study of a single hydrogen-like impurity in semi-insulating GaAs. https://arxiv.org/abs/0810.2692

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