Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

Stéphane Faure; T. Guillet; P. Lefebvre; T. Bretagnon; B. Gil

doi:10.1103/physrevb.78.235323

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arXiv · 0810.1811

Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

Stéphane Faure·T. Guillet·P. Lefebvre·T. Bretagnon·B. Gil

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Abstract

Wide bandgap semiconductors are attractive candidates for polariton-based devices operating at room temperature. We present numerical simulations of reflectivity, transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compare the particularities of the strong coupling regime in each system. Indeed the intrinsic properties of the excitons in these materials result in a different hierarchy of energies between the valence-band splitting, the effective Rydberg and the Rabi energy, defining the characteristics of the exciton-polariton states independently of the quality factor of the cavity. The knowledge of the composition of the polariton eigenstates is central to optimize such systems. We demonstrate that, in ZnO bulk microcavities, only the lower polaritons are good eigenstates and all other resonances are damped, whereas upper polaritons can be properly defined in GaAs and GaN microcavities.

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Stéphane Faure, T. Guillet, P. Lefebvre, T. Bretagnon, B. Gil. 2008-10-10. Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities. https://doi.org/10.1103/physrevb.78.235323

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