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arXiv · 0810.0289

Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures

Yaohua Liu·Shannon M. Watson·Taegweon Lee·Justin M. Gorham·Howard E. Katz·Julie A. Borchers·Howard D. Fairbrother·Daniel H. Reich
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Abstract

We have studied magnetotransport in organic-inorganic hybrid multilayer junctions. In these devices, the organic semiconductor (OSC) Alq$_3$ (tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic (FM) Co and Fe layers. The thickness of the Alq$_3$ layer was in the range of 50-150 nm. Positive magnetoresistance (MR) was observed at 4.2 K in a current perpendicular to plane geometry, and these effects persisted up to room temperature. The devices' microstructure was studied by X-ray reflectometry, Auger electron spectroscopy and polarized neutron reflectometry (PNR). The films show well-defined layers with modest average chemical roughness (3-5 nm) at the interface between the Alq$_3$ and the surrounding FM layers. Reflectometry shows that larger MR effects are associated with smaller FM/Alq$_3$ interface width (both chemical and magnetic) and a magnetically dead layer at the Alq$_3$/Fe interface. The PNR data also show that the Co layer, which was deposited on top of the Alq$_3$, adopts a multi-domain magnetic structure at low field and a perfect anti-parallel state is not obtained. The origins of the observed MR are discussed and attributed to spin coherent transport. A lower bound for the spin diffusion length in Alq$_3$ was estimated as $43 \pm 5$ nm at 80 K. However, the subtle correlations between microstructure and magnetotransport indicate the importance of interfacial effects in these systems.

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Yaohua Liu, Shannon M. Watson, Taegweon Lee, Justin M. Gorham, Howard E. Katz, Julie A. Borchers, Howard D. Fairbrother, Daniel H. Reich. 2008-10-01. Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures. https://doi.org/10.1103/physrevb.79.075312

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