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arXiv · 0809.3654

Manganese-diffusion-induced n-doping in semiconductor structures containing Ga(Mn)As layers

T. Korn·R. Schulz·S. Fehringer·U. Wurstbauer·D. Schuh·W. Wegscheider·M. W. Wu·C. Schüller
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Abstract

Semiconductor structures using ferromagnetic semiconductors as spin injectors are promising systems for future spintronic devices. Here, we present combined photoluminescence (PL) and time-resolved magneto-optical experiments of a nominally nonmagnetic quantum well(QW) separated by a thin barrier from a ferromagnetic Ga(Mn)As layer. Due to the partial quenching of the PL, we conclude that there is a significant Mn backdiffusion into the QW. Moreover, from the time-resolved measurements, we infer that the Mn leads to n-type doping within the QW, and, in addition, strongly increases the electron spin dephasing time.

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T. Korn, R. Schulz, S. Fehringer, U. Wurstbauer, D. Schuh, W. Wegscheider, M. W. Wu, C. Schüller. 2008-11-12. Manganese-diffusion-induced n-doping in semiconductor structures containing Ga(Mn)As layers. https://arxiv.org/abs/0809.3654

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