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Tuning the exciton g-factor in single InAs/InP quantum dots

D. Kim·W. Sheng·P. J. Poole·D. Dalacu·J. Lefebvre·J. Lapointe·M. E. Reimer·G. C. Aers·R. L. Williams
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Abstract

Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g-factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp3 tight binding calculations, which show that the hole g-factor is sensitive to confinement effects through orbital angular momentum mixing between the light-hole and heavy-hole valence bands. We demonstrate tunability of the exciton g-factor by manipulating the quantum dot dimensions using pyramidal InP nanotemplates.

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D. Kim, W. Sheng, P. J. Poole, D. Dalacu, J. Lefebvre, J. Lapointe, M. E. Reimer, G. C. Aers, R. L. Williams. 2008-12-10. Tuning the exciton g-factor in single InAs/InP quantum dots. https://doi.org/10.1103/physrevb.79.045310

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