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arXiv · 0809.2225

Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices

Biqin Huang·Hyuk-Jae Jang·Ian Appelbaum
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Abstract

Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very strong, Hanle effect in a uniaxial magnetic field can be impossible to measure. Using a Silicon device with lateral injector-detector separation over 2 millimeters, and geometrically-induced dephasing making spin transport completely incoherent, we show experimentally and theoretically that Hanle effect can still be measured using a two-axis magnetic field.

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Biqin Huang, Hyuk-Jae Jang, Ian Appelbaum. 2008-09-12. Geometric dephasing-limited Hanle effect in long-distance lateral silicon spin transport devices. https://doi.org/10.1063/1.3006333

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