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arXiv · 0809.1253

Direct strain and elastic energy evaluation in rolled-up semiconductor tubes by x-ray micro-diffraction

A. Malachias·Ch. Deneke·B. Krause·C. Mocuta·S. Kiravittaya·T. H. Metzger·O. G. Schmidt
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Abstract

We depict the use of x-ray diffraction as a tool to directly probe the strain status in rolled-up semiconductor tubes. By employing continuum elasticity theory and a simple model we are able to simulate quantitatively the strain relaxation in perfect crystalline III-V semiconductor bi- and multilayers as well as in rolled-up layers with dislocations. The reduction in the local elastic energy is evaluated for each case. Limitations of the technique and theoretical model are discussed in detail.

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A. Malachias, Ch. Deneke, B. Krause, C. Mocuta, S. Kiravittaya, T. H. Metzger, O. G. Schmidt. 2008-09-07. Direct strain and elastic energy evaluation in rolled-up semiconductor tubes by x-ray micro-diffraction. https://doi.org/10.1103/physrevb.79.035301

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