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Potential barrier lowering and electrical transport at the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface

Franklin J. Wong·Miaofang Chi·Rajesh V. Chopdekar·Brittany B. Nelson-Cheeseman·Nigel D. Browning·Yuri Suzuki
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Abstract

Using a combination of vertical transport measurements across and lateral transport measurements along the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface, we demonstrate that significant potential barrier lowering and band bending are the cause of interfacial metallicity. Barrier lowering and enhanced band bending extends over 2.5 nm into LaAlO$_{3}$ as well as SrTiO$_{3}$. We explain origins of high-temperature carrier saturation, lower carrier concentration, and higher mobility in the sample with the thinnest LaAlO$_{3}$ film on a SrTiO$_{3}$ substrate. Lateral transport results suggest that parasitic interface scattering centers limit the low-temperature lateral electron mobility of the metallic channel.

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Franklin J. Wong, Miaofang Chi, Rajesh V. Chopdekar, Brittany B. Nelson-Cheeseman, Nigel D. Browning, Yuri Suzuki. 2008-09-04. Potential barrier lowering and electrical transport at the LaAlO$_{3}$/SrTiO$_{3}$ heterointerface. https://arxiv.org/abs/0809.0926

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