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arXiv · 0808.3289

Origin of giant photocontraction in obliquely deposited amorphous Ge_xSe_{1-x} thin- films and the intermediate phase

Mingji Jin·Ping Chen·P. Boolchand·T. Rajagopalan·K. L. Chopra·K. Starbova·N. Starbov
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Abstract

Obliquely deposited amorphous Ge_xSe{1-x} thin-films at several compositions in the 0.15 < x < 0.333 range, and at several obliqueness angles in the 0 < alpha < 80 range at each x were evaporated on Si and glass substrates. Here alpha designates the angle between film normal and direction of vapor transport. Raman scattering, ir reflectance and optical absorption measurements were undertaken to characterize the vibrational density of states and optical band gaps. Edge views of films in SEM confirm the columnar structure of obliquely (alpha = 80) deposited films. Films, mounted in a cold stage flushed with N2 gas, were irradiated to UV radiation from a Hg-Xe arc lamp, and

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Mingji Jin, Ping Chen, P. Boolchand, T. Rajagopalan, K. L. Chopra, K. Starbova, N. Starbov. 2008-08-25. Origin of giant photocontraction in obliquely deposited amorphous Ge_xSe_{1-x} thin- films and the intermediate phase. https://doi.org/10.1103/physrevb.78.214201

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