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arXiv · 0808.3032

Electron Tunneling in Monolayer and Bilayer Graphene

Di Wu·Weiqiang Chen·Fu-Chun Zhang
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Abstract

Electron's tunneling through potential barrier in monolayer and bilayer graphene lattices is investigated by using full tight-binding model. Emphasis is placed on the resonance tunneling feature and inter-valley scattering probability. It is shown that normal incidence transmission probabilities for monolayer and bilayer graphene exhibit different properties. Our calculation indicates that valleytronics in graphene systems may be detected, generated and controlled by changing the structure parameters of the external electric potential.

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Di Wu, Weiqiang Chen, Fu-Chun Zhang. 2008-08-22. Electron Tunneling in Monolayer and Bilayer Graphene. https://arxiv.org/abs/0808.3032

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