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arXiv · 0808.1810

In-gap state and effect of light illumination in CuIr$_2$S$_4$ probed by photoemission spectroscopy

K. Takubo·T. Mizokawa·N. Matsumoto·S. Nagata
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Abstract

We have studied disorder-induced in-gap states and effect of light illumination in the insulating phase of spinel-type CuIr$_2$S$_4$ using ultra-violet photoemission spectroscopy (UPS). The Ir$^{3+}$/Ir$^{4+}$ charge-ordered gap appears below the metal-insulator transition temperature. However, in the insulating phase, in-gap spectral features with $softgap$ are observed in UPS just below the Fermi level ($E_F$), corresponding to the variable range hopping transport observed in resistivity. The spectral weight at $E_F$ is not increased by light illumination, indicating that the Ir$^{4+}$-Ir$^{4+}$ dimer is very robust although the long-range octamer order would be destructed by the photo-excitation. Present results suggest that the Ir$^{4+}$-Ir$^{4+}$ bipolaronic hopping and disorder effects are responsible for the conductivity of CuIr$_2$S$_4$.

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K. Takubo, T. Mizokawa, N. Matsumoto, S. Nagata. 2008-08-13. In-gap state and effect of light illumination in CuIr$_2$S$_4$ probed by photoemission spectroscopy. https://doi.org/10.1103/physrevb.78.245117

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