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arXiv · 0808.1203

Hydrogen/silicon complexes in silicon from computational searches

Andrew J. Morris·Chris J. Pickard·R. J. Needs
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Abstract

Defects in crystalline silicon consisting of a silicon self-interstitial atom and one, two, three, or four hydrogen atoms are studied within density-functional theory (DFT). We search for low-energy defects by starting from an ensemble of structures in which the atomic positions in the defect region have been randomized. We then relax each structure to a minimum in the energy. We find a new defect consisting of a self-interstitial and one hydrogen atom (denoted by {I,H}) which has a higher symmetry and a lower energy than previously reported structures. We recover the {I,H_2} defect found in previous studies and confirm that it is the most stable such defect. Our best {I,H_3} defect has a slightly different structure and lower energy than the one previously reported, and our lowest energy {I,H_4} defect is different to those of previous studies.

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Andrew J. Morris, Chris J. Pickard, R. J. Needs. 2008-08-08. Hydrogen/silicon complexes in silicon from computational searches. https://doi.org/10.1103/physrevb.78.184102

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