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arXiv · 0807.2885

Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions

M. Zhu·M. J. Wilson·P. Mitra·P. Schiffer·N. Samarth
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Abstract

We report a large, quasi-reversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (\gma) is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an "exchange spring") within the biased \gma layer. The distinctive tunneling anisotropic magnetoresistance of \gma produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring.

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M. Zhu, M. J. Wilson, P. Mitra, P. Schiffer, N. Samarth. 2008-07-17. Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions. https://doi.org/10.1103/physrevb.78.195307

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