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arXiv · 0807.1526

Proposal for a nanoscale variable resistor/electromechanical transistor

J. Bürki·C. A. Stafford·D. L. Stein
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Abstract

A nanoscale variable resistor consisting of a metal nanowire (active element), a dielectric, and a gate, is proposed. By means of the gate voltage, stochastic transitions between different conducting states of the nanowire can be induced, with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an ``electromechanical transistor,'' is shown to significantly exceed the conductance quantum G_0=2e^2/h, a remarkable figure of merit for a nanoscale device.

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J. Bürki, C. A. Stafford, D. L. Stein. 2008-07-09. Proposal for a nanoscale variable resistor/electromechanical transistor. https://arxiv.org/abs/0807.1526

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