arXiv · 0806.4955
Hot-electron noise suppression in n-Si via the Hall effect
Abstract
We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity.
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F. Ciccarello, S. Zammito, M. Zarcone. 2008-06-30. Hot-electron noise suppression in n-Si via the Hall effect. https://doi.org/10.1088/1742-5468/2009/01/p01042
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