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arXiv · 0806.1489

Impact of Si nanocrystals in a-SiOx in C-Band emission for applications in resonators structures

D. S. L Figueira·D. Mustafa·L. R. Tessler·N. C. Frateschi
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Abstract

Si nanocrystals (Si-NC) in a-SiOx were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix to the Er3+ ions, perhaps due to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples.

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D. S. L Figueira, D. Mustafa, L. R. Tessler, N. C. Frateschi. 2008-06-09. Impact of Si nanocrystals in a-SiOx in C-Band emission for applications in resonators structures. https://doi.org/10.1109/imoc.2007.4404253

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