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arXiv · 0805.4244

Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

L. H. Willems van Beveren·H. Huebl·D. R. McCamey·T. Duty·A. J. Ferguson·R. G. Clark·M. S. Brandt
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Abstract

We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas.

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L. H. Willems van Beveren, H. Huebl, D. R. McCamey, T. Duty, A. J. Ferguson, R. G. Clark, M. S. Brandt. 2008-05-28. Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. https://doi.org/10.1063/1.2960356

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