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Electronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy

G. S. Song·M. Kobayashi·J. I. Hwang·T. Kataoka·M. Takizawa·A. Fujimori·T. Ohkouchi·Y. Takeda·T. Okane·Y. Saitoh·H. Yamagami·F. -H. Chang·L. Lee·H. -J. Lin·D. J. Huang·C. T. Chen·S. Kimura·M. Funakoshi·S. Hasegawa·H. Asahi
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Abstract

The electronic structure of the magnetic semiconductor Ga$_{1-x}$Cr$_{x}$N and the effect of Si doping on it have been investigated by photoemission and soft x-ray absorption spectroscopy. We have confirmed that Cr in GaN is predominantly trivalent substituting for Ga, and that Cr 3$d$ states appear within the band gap of GaN just above the N 2$p$-derived valence-band maximum. As a result of Si doping, downward shifts of the core levels (except for Cr 2$p$) and the formation of new states near the Fermi level were observed, which we attribute to the upward chemical potential shift and the formation of a small amount of Cr$^{2+}$ species caused by the electron doping. Possibility of Cr-rich cluster growth by Si doping are discussed based on the spectroscopic and magnetization data.

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G. S. Song, M. Kobayashi, J. I. Hwang, T. Kataoka, M. Takizawa, A. Fujimori, T. Ohkouchi, Y. Takeda, T. Okane, Y. Saitoh, H. Yamagami, F. -H. Chang, L. Lee, H. -J. Lin, D. J. Huang, C. T. Chen, S. Kimura, M. Funakoshi, S. Hasegawa, H. Asahi. 2008-05-21. Electronic structure of Ga$_{1-x}$Cr$_{x}$N and Si-doping effects studied by photoemission and X-ray absorption spectroscopy. https://doi.org/10.1103/physrevb.78.033304

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