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arXiv · 0805.3159

Unification of bulk and interface electroresistive switching in oxide systems

A. Ruotolo·C. W. Leung·C. Y. Lam·W. F. Cheng·K. H. Wong·G. P. Pepe
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Abstract

We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.

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A. Ruotolo, C. W. Leung, C. Y. Lam, W. F. Cheng, K. H. Wong, G. P. Pepe. 2008-06-01. Unification of bulk and interface electroresistive switching in oxide systems. https://doi.org/10.1103/physrevb.77.233103

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