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arXiv · 0805.2230

Optically induced transport properties of freely suspended semiconductor submicron channels

C. Rossler·K. -D. Hof·S. Manus·S. Ludwig·J. P. Kotthaus·J. Simon·A. W. Holleitner·D. Schuh·W. Wegscheider
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Abstract

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.

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C. Rossler, K. -D. Hof, S. Manus, S. Ludwig, J. P. Kotthaus, J. Simon, A. W. Holleitner, D. Schuh, W. Wegscheider. 2008-05-15. Optically induced transport properties of freely suspended semiconductor submicron channels. https://doi.org/10.1063/1.2970035

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