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arXiv · 0804.1853

Fast Molecular-Dynamics Simulation for Ferroelectric Thin-Film Capacitors Using a First-Principles Effective Hamiltonian

Takeshi Nishimatsu·Umesh V. Waghmare·Yoshiyuki Kawazoe·David Vanderbilt
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Abstract

A newly developed fast molecular-dynamics method is applied to BaTiO3 ferroelectric thin-film capacitors with short-circuited electrodes or under applied voltage. The molecular-dynamics simulations based on a first-principles effective Hamiltonian clarify that dead layers (or passive layers) between ferroelectrics and electrodes markedly affect the properties of capacitors, and predict that the system is unable to hop between a uniformly polarized ferroelectric structure and a striped ferroelectric domain structure at low temperatures. Simulations of hysteresis loops of thin-film capacitors are also performed, and their dependence on film thickness, epitaxial constraints, and electrodes are discussed.

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Takeshi Nishimatsu, Umesh V. Waghmare, Yoshiyuki Kawazoe, David Vanderbilt. 2008-06-12. Fast Molecular-Dynamics Simulation for Ferroelectric Thin-Film Capacitors Using a First-Principles Effective Hamiltonian. https://doi.org/10.1103/physrevb.78.104104

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