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Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching

C. Bihler·M. Althammer·A. Brandlmaier·S. Gepraegs·M. Weiler·M. Opel·W. Schoch·W. Limmer·R. Gross·M. S. Brandt·S. T. B. Goennenwein
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Abstract

We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we quantify the magnetic anisotropy as a function of the voltage V_p applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. We find that the easy axis of the strain-induced uniaxial magnetic anisotropy contribution can be inverted from the [110] to the [1-10] direction via the application of appropriate voltages V_p. At T=5K the magnetoelastic term is a minor contribution to the magnetic anisotropy. Nevertheless, we show that the switching fields of rho(H) loops are shifted as a function of V_p at this temperature. At 50K - where the magnetoelastic term dominates the magnetic anisotropy - we are able to tune the magnetization orientation by about 70 degree solely by means of the electrical voltage V_p applied. Furthermore, we derive the magnetostrictive constant lambda_111 as a function of temperature and find values consistent with earlier results. We argue that the piezo-voltage control of magnetization orientation is directly transferable to other ferromagnetic/piezoelectric hybrid structures, paving the way to innovative multifunctional device concepts. As an example, we demonstrate piezo-voltage induced irreversible magnetization switching at T=40K, which constitutes the basic principle of a nonvolatile memory element.

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C. Bihler, M. Althammer, A. Brandlmaier, S. Gepraegs, M. Weiler, M. Opel, W. Schoch, W. Limmer, R. Gross, M. S. Brandt, S. T. B. Goennenwein. 2008-04-08. Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching. https://doi.org/10.1103/physrevb.78.045203

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