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arXiv · 0802.3739

Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors

S. H. Chang·S. C. Chae·S. B. Lee·C. Liu·T. W. Noh·J. S. Lee·B. Kahng·J. H. Jang·M. Y. Kim·D. -W. Kim·C. U. Jung
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Abstract

We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE} \geq 50$ nm exhibited typical unipolar resistance memory switching, while those with $t_{BE} \leq 30$ nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner $t_{BE}$ makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory.

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S. H. Chang, S. C. Chae, S. B. Lee, C. Liu, T. W. Noh, J. S. Lee, B. Kahng, J. H. Jang, M. Y. Kim, D. -W. Kim, C. U. Jung. 2008-02-26. Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors. https://doi.org/10.1063/1.2924304

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