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arXiv · 0802.2389

Ultrahigh electron mobility in suspended graphene

K. I. Bolotin·K. J. Sikes·Z. Jiang·M. Klima·G. Fudenberg·J. Hone·P. Kim·H. L. Stormer
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Abstract

We have achieved mobilities in excess of 200,000 cm^2/Vs at electron densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching. The specimens were cleaned in situ by employing current-induced heating, directly resulting in a significant improvement of electrical transport. Concomitant with large mobility enhancement, the widths of the characteristic Dirac peaks are reduced by a factor of 10 compared to traditional, non-suspended devices. This advance should allow for accessing the intrinsic transport properties of graphene.

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K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, H. L. Stormer. 2008-05-27. Ultrahigh electron mobility in suspended graphene. https://doi.org/10.1016/j.ssc.2008.02.024

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