Ground State Energy of Current Carriers in Graphene

P. V. Ratnikov; A. P. Silin

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arXiv · 0801.4642

Ground State Energy of Current Carriers in Graphene

P. V. Ratnikov·A. P. Silin

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Abstract

The ground state energy of current carriers in graphene considered as a zero-gap semiconductor was calculated in the two-band approximation. The condition of the electronic (hole) system stability in graphene was obtained. The possibility of the zero-gap semiconductor-semimetal transition was discussed.

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P. V. Ratnikov, A. P. Silin. 2008-01-30. Ground State Energy of Current Carriers in Graphene. https://arxiv.org/abs/0801.4642

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