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arXiv · 0801.3323

Abnormal Resistance Switching Behaviors of NiO Thin Films: Possible Occurrence of Simultaneous Formation and Rupture of Conducting Channels

Chunli Liu·S. C. Chae·S. H. Chang·S. B. Lee·T. W. Noh·J. S. Lee·B. Kahng·D. -W. Kim·C. U. Jung·S. Seo·Seung-Eon Ahn
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Abstract

We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance to a high resistance state. However, we found that this resistance switching can sometimes show abnormal behavior during voltage- and current-driven I-V measurements. We used the random circuit breaker network model to explain how abnormal switching behaviors could occur. We found that this resistance change can occur via a series of avalanche processes, where conducting filaments could be formed as well as ruptured.

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Chunli Liu, S. C. Chae, S. H. Chang, S. B. Lee, T. W. Noh, J. S. Lee, B. Kahng, D. -W. Kim, C. U. Jung, S. Seo, Seung-Eon Ahn. 2008-01-22. Abnormal Resistance Switching Behaviors of NiO Thin Films: Possible Occurrence of Simultaneous Formation and Rupture of Conducting Channels. https://doi.org/10.1088/0022-3727%2F42%2F1%2F015506

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