A Modular High-Temperature Measurement Set-Up for Semiconductor Device Characterization

P. Borthen; G. Wachutka

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arXiv · 0801.1038

A Modular High-Temperature Measurement Set-Up for Semiconductor Device Characterization

P. Borthen·G. Wachutka

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Abstract

We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room temperature up to 500 degrees C and higher. A detailed description of the experimental aquipment is given. Its practical use is demonstrated by measuring temperature-dependent charcteristics of silicon VDMOSFET and IGBT devices as well as SiC-diodes. For the silicon devices, numerical simulations based on recently developed high temperature physical models were also performed in order to gain a deeper understanding of the measured data, together with a revalidation of the model parameters.

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P. Borthen, G. Wachutka. 2008-01-07. A Modular High-Temperature Measurement Set-Up for Semiconductor Device Characterization. https://arxiv.org/abs/0801.1038

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