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arXiv · 0711.4828

Non-ohmic spin transport in n-type doped silicon

Hyuk-Jae Jang·Jing Xu·Jing Li·Biqin Huang·Ian Appelbaum
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Abstract

We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and dephasing ("Hanle effect") measurements. A voltage applied across the transport layer is used to vary the confinement potential caused by conduction band-bending and control the dominant transport mechanism between drift and diffusion. By modeling transport in this device with a Monte-Carlo scheme, we simulate the observed spin polarization and Hanle features, showing that the average transit time across the short Si transport layer can be controlled over 4 orders of magnitude with applied voltage. As a result, this modeling allows inference of a long electron spin lifetime, despite the short transit length.

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Hyuk-Jae Jang, Jing Xu, Jing Li, Biqin Huang, Ian Appelbaum. 2008-08-11. Non-ohmic spin transport in n-type doped silicon. https://doi.org/10.1103/physrevb.78.165329

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