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arXiv · 0710.1515

Ferromagnetic-like closure domains in ferroelectric ultrathin films

Pablo Aguado-Puente·Javier Junquera
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Abstract

We simulate from first-principles the energetic, structural, and electronic properties of ferroelectric domains in ultrathin capacitors made of a few unit cells of BaTiO$_3$ between two metallic SrRuO$_3$ electrodes in short circuit. The domains are stabilized down to two unit cells, adopting the form of a domain of closure, common in ferromagnets but only recently detected experimentally in ferroelectric thin films. The domains are closed by the in-plane relaxation of the atoms in the first SrO layer of the electrode, that behaves more like SrO in highly polarizable SrTiO$_3$ than in metallic SrRuO$_3$. Even if small, these lateral displacements are essential to stabilize the domains, and might provide some hints to explain why some systems break into domains while others remain in a monodomain configuration. An analysis of the electrostatic potential reveals preferential points of pinning for charged defects at the ferroelectric-electrode interface, possibly playing a major role in films fatigue.

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Pablo Aguado-Puente, Javier Junquera. 2007-10-08. Ferromagnetic-like closure domains in ferroelectric ultrathin films. https://arxiv.org/abs/0710.1515

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