arXiv Science⌕ Search
Home/Archive/arXiv

arXiv · 0710.0200

Intrinsic dissipation in nanomechanical resonators due to phonon tunneling

I. Wilson-Rae
View original source ↗Read source document ↗Export metadata ↓

Abstract

State of the art nanomechanical resonators present quality factors Q ~ 10^3 - 10^5, which are much lower than those that can be naively extrapolated from the behavior of micromechanical resonators. We analyze the dissipation mechanism that arises in nanomechanical beam-structures due to the tunneling of mesoscopic phonons between the beam and its supports (known as clamping losses). We derive the environmental force spectral density that determines the quantum Brownian motion of a given resonance. Our treatment is valid for low frequencies and provides the leading contribution in the aspect ratio. This yields fundamental limits for the Q-values which are described by simple scaling laws and are relevant for state of the art experimental structures. In this context, for resonant frequencies in the 0.1-1GHz range, while this dissipation mechanism can limit flexural resonators it is found to be negligible for torsional ones. In the case of structureless 3D supports the corresponding environmental spectral densities are Ohmic for flexural resonators and super-Ohmic for torsional ones, while for 2D slab supports they yield 1/f noise. Furthermore analogous results are established for the case of suspended semiconducting single-walled carbon nanotubes. Finally, we provide a general expression for the spectral density that allows to extend our treatment to other geometries and illustrate its use by applying it to a microtoroid. Our analysis is relevant for applications in high precision measurements and for the prospects of probing quantum effects in a macroscopic mechanical degree of freedom.

Explore related subjects

cond-mat.mes-hallquant-ph

Keep this discovery

BibTeXRIS

I. Wilson-Rae. 2008-05-28. Intrinsic dissipation in nanomechanical resonators due to phonon tunneling. https://doi.org/10.1103/physrevb.77.245418

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall↗
arXiv2026

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall↗
arXiv2026

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall↗