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arXiv · 0709.1579

Dislocation formation from a surface step in semiconductors: an ab initio study

Julien Godet·Sandrine Brochard·Laurent Pizzagalli·Pierre Beauchamp·Jose M. Soler
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Abstract

The role of a simple surface defect, such as a step, for relaxing the stress applied to a semiconductor, has been investigated by means of large scale first principles calculations. Our results indicate that the step is the privileged site for initiating plasticity, with the formation and glide of 60$^\circ$ dislocations for both tensile and compressive deformations. We have also examined the effect of surface and step termination on the plastic mechanisms.

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Julien Godet, Sandrine Brochard, Laurent Pizzagalli, Pierre Beauchamp, Jose M. Soler. 2007-09-11. Dislocation formation from a surface step in semiconductors: an ab initio study. https://doi.org/10.1103/physrevb.73.092105

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