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arXiv · 0708.4239

Thermodynamic modeling of the Hf-Si-O system

Dongwon Shin·Raymundo Arróyave·Zi-Kui Liu
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Abstract

The Hf-O system has been modeled by combining existing experimental data and first-principles calculations results through the CALPHAD approach. Special quasirandom structures of $α$ and $β$ hafnium were generated to calculate the mixing behavior of oxygen and vacancies. For the total energy of oxygen, vibrational, rotational and translational degrees of freedom were considered. The Hf-O system was combined with previously modeled Hf-Si and Si-O systems, and the ternary compound in the Hf-Si-O system, HfSiO$_4$ has been introduced to calculate the stability diagrams pertinent to the thin film processing.

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Dongwon Shin, Raymundo Arróyave, Zi-Kui Liu. 2007-08-30. Thermodynamic modeling of the Hf-Si-O system. https://doi.org/10.1016/j.calphad.2006.08.006

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