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arXiv · 0708.1266

Electroluminescence from single nanowires by tunnel injection: an experimental study

Mariano A. Zimmler·Jiming Bao·Ilan Shalish·Wei Yi·Joonah Yoon·Venkatesh Narayanamurti·Federico Capasso
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Abstract

We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.

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Mariano A. Zimmler, Jiming Bao, Ilan Shalish, Wei Yi, Joonah Yoon, Venkatesh Narayanamurti, Federico Capasso. 2007-08-09. Electroluminescence from single nanowires by tunnel injection: an experimental study. https://doi.org/10.1088/0957-4484/18/23/235205

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