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On-Chip Matching Networks for Radio-Frequency Single-Electron-Transistors

W. W. Xue·Z. Ji·B. Davis·Feng Pan·J. Stettenheim·T. J. Gilheart·A. J. Rimberg
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Abstract

In this letter, we describe operation of a radio-frequency superconducting single electron transistor (RF-SSET) with an on-chip superconducting LC matching network consisting of a spiral inductor L and its capacitance to ground. The superconducting network has a lower parasitic capacitance and gives a better matching for the RF-SSET than does a commercial chip inductor. Moreover, the superconducting network has negligibly low dissipation, leading to sensitive response to changes in the RF-SSET impedance. The charge sensitivity 2.4*10^-6 e/(Hz)^1/2 in the sub-gap region and energy sensitivity of 1.9 hbar indicate that the RF-SSET is operating in the vicinity of the shot noise limit.

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W. W. Xue, Z. Ji, B. Davis, Feng Pan, J. Stettenheim, T. J. Gilheart, A. J. Rimberg. 2007-08-07. On-Chip Matching Networks for Radio-Frequency Single-Electron-Transistors. https://doi.org/10.1063/1.2776888

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