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arXiv · 0708.0461

A cryogenic amplifier for fast real-time detection of single-electron tunneling

I. T. Vink·T. Nooitgedagt·R. N. Schouten·W. Wegscheider·L. M. K. Vandersypen
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Abstract

We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of 1 MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than that of the QPC shot noise. We use this setup to monitor single-electron tunneling to and from an adjacent quantum dot and we measure fluctuations in the dot occupation as short as 400 nanoseconds, 20 times faster than in previous work.

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I. T. Vink, T. Nooitgedagt, R. N. Schouten, W. Wegscheider, L. M. K. Vandersypen. 2007-08-06. A cryogenic amplifier for fast real-time detection of single-electron tunneling. https://doi.org/10.1063/1.2783265

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