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Driving-dependent damping of Rabi oscillations in two-level semiconductor systems

D. Mogilevtsev·A. P. Nisovtsev·S. Kilin·S. B. Cavalcanti·H. S. Brandi·L. E. Oliveira
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Abstract

We propose a mechanism to explain the nature of the damping of Rabi oscillations with increasing driving-pulse area in localized semiconductor systems, and have suggested a general approach which describes a coherently driven two-level system interacting with a dephasing reservoir. Present calculations show that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Moreover, we have shown that the damping of Rabi oscillations might occur as a result of different dephasing mechanisms for both stationary and non-stationary effects due to coupling to the environment. Present calculated results are found in quite good agreement with available experimental measurements.

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D. Mogilevtsev, A. P. Nisovtsev, S. Kilin, S. B. Cavalcanti, H. S. Brandi, L. E. Oliveira. 2007-06-29. Driving-dependent damping of Rabi oscillations in two-level semiconductor systems. https://doi.org/10.1103/physrevlett.100.017401

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