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arXiv · 0706.3764

Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC

Victor W. Brar·Yuanbo Zhang·Yossi Yayon·Aaron Bostwick·Taisuke Ohta·Jessica L. McChesney·Karsten Horn·Eli Rotenberg·Michael F. Crommie
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Abstract

We present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias images are dominated by emergent spatially inhomogeneous large-scale structure similar to a carbon-rich reconstruction of SiC(0001). STS spectroscopy shows a ~100meV gap-like feature around zero bias for both monolayer and bilayer graphene/SiC, as well as significant spatial inhomogeneity in electronic structure above the gap edge. Nanoscale structure at the SiC/graphene interface is seen to correlate with observed electronic spatial inhomogeneity. These results are important for potential devices involving electronic transport or tunneling in graphene/SiC.

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Victor W. Brar, Yuanbo Zhang, Yossi Yayon, Aaron Bostwick, Taisuke Ohta, Jessica L. McChesney, Karsten Horn, Eli Rotenberg, Michael F. Crommie. 2007-07-12. Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC. https://doi.org/10.1063/1.2771084

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