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arXiv · 0706.0373

Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve

K. Hamaya·M. Kitabatake·K. Shibata·M. Jung·M. Kawamura·K. Hirakawa·T. Machida·S. Ishida·Y. Arakawa
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Abstract

We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition.

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K. Hamaya, M. Kitabatake, K. Shibata, M. Jung, M. Kawamura, K. Hirakawa, T. Machida, S. Ishida, Y. Arakawa. 2007-08-30. Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve. https://doi.org/10.1063/1.2759264

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