arXiv · 0706.0371
Odd-Integer Quantum Hall Effect in Graphene: Interaction and Disorder Effects
Abstract
We study the competition between the long-range Coulomb interaction, disorder scattering, and lattice effects in the integer quantum Hall effect (IQHE) in graphene. By direct transport calculations, both $ν=1$ and $ν=3$ IQHE states are revealed in the lowest two Dirac Landau levels. However, the critical disorder strength above which the $ν=3$ IQHE is destroyed is much smaller than that for the $ν=1$ IQHE, which may explain the absence of a $ν=3$ plateau in recent experiments. While the excitation spectrum in the IQHE phase is gapless within numerical finite-size analysis, we do find and determine a mobility gap, which characterizes the energy scale of the stability of the IQHE. Furthermore, we demonstrate that the $ν=1$ IQHE state is a Dirac valley and sublattice polarized Ising pseudospin ferromagnet, while the $ν=3$ state is an $xy$ plane polarized pseudospin ferromagnet.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
L. Sheng, D. N. Sheng, F. D. M. Haldane, Leon Balents. 2007-09-16. Odd-Integer Quantum Hall Effect in Graphene: Interaction and Disorder Effects. https://doi.org/10.1103/physrevlett.99.196802
Cite the original work for its findings. Save a collection to share your selection of sources.