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arXiv · 0705.4260

Experimental realization of a silicon spin field-effect transistor

Biqin Huang·Douwe J. Monsma·Ian Appelbaum
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Abstract

A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin direction at the spin detector and hence the output collector current, this comprises a spin field-effect transistor. An improved hot-electron spin injector providing ~115% magnetocurrent, corresponding to at least ~38% electron current spin polarization after transport through 10 microns undoped single-crystal silicon, is used for maximum current modulation.

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Biqin Huang, Douwe J. Monsma, Ian Appelbaum. 2007-05-29. Experimental realization of a silicon spin field-effect transistor. https://doi.org/10.1063/1.2770656

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